![]() ![]() Among such compounds, cadmium sulfide (CdS) has been of keen interest due to its extraordinary optoelectronic properties which has led to unique device applications in thin-film photovoltaics, nanophotodetectors, lasers, etc. ![]() II–VI semiconductors are compound semiconductors formed by group IIB metallic elements (Cd, Zn, and Hg) with group VI nonmetallic elements (O, S, Se, and Te). In recent years, II–VI semiconductors have been the focus of intense research and development due to their potential use in various applications. This work is the first study to demonstrate Cd 1-x Zn x S thin films by a spin coating/melt method from xanthato precursors. The resistivity of Cd 1-x Zn x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. ![]() The band gaps of the films were between 2.35–2.58 and 3.75 eV (0 B x B 0.15 and at x = 1). The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV–Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. A total metal precursor solution concentration of 50 mM was used in all cases. The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. ![]() A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250 ☌ for 1 h under N 2. Thin films of Cd 1-x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato and zinc ethylxanthato in x ratios of 0–0.15 and of 1. ![]()
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